Khuyến mãi |
|
|
Kích thước |
80.15 x 22.15 x 2.38 (mm) |
80.5 x 11.4 x 23.5 mm |
Loại |
M.2 (2280) |
M.2 2280 |
Chuẩn giao tiếp |
PCIe Gen 4.0 x4, NVMe 1.3c |
PCI-Express 4.0x4, NVMe 1.3 |
Tốc độ đọc |
- 250GB: Up to 6,400 MB/s
- 500GB: Up to 6,900 MB/s
- 1TB: Up to 7,000 MB/s
|
5000 MB/s |
Tốc độ ghi |
- 250GB: Up to 2,700 MB/s
- 500GB: Up to 5,000 MB/s
- 1TB: Up to 5,000 MB/s
|
- - 500GB: 2500 MB/s
- - 1TB, 2TB: 4400 MB/s
|
Bộ nhớ Cache |
- Samsung 512MB Low Power DDR4 SDRAM (250/500GB)
- Samsung 1GB Low Power DDR4 SDRAM (1TB)
|
- - 500GB: DDR4 512MB
- - 1TB: DDR4 1GB
- - 2TB: DDR4 2GB
|
Random 4K |
- RANDOM READ (4KB, QD32)
- 250GB: Up to 500,000 IOPS
- 500GB: Up to 800,000 IOPS
- 1TB: Up to 1,000,000 IOPS
- RANDOM WRITE (4KB, QD32)
- 250GB: Up to 600,000 IOPS
- 500GB: Up to 1,000,000 IOPS
- 1TB: Up to 1,000,000 IOPS
- RANDOM READ (4KB, QD1)
- 250GB: Up to 22,000 IOPS
- 500GB: Up to 22,000 IOPS
- 1TB: Up to 22,000 IOPS
- RANDOM WRITE (4KB, QD1)
- 250GB: Up to 60,000 IOPS
- 500GB: Up to 60,000 IOPS
- 1TB: Up to 60,000 IOPS
|
- Random Read
- - 500GB: 400k IOPS
- - 1TB, 2TB: 750k
- Random Write
- - 500GB: 550k IOPS
- - 1TB, 2TB: 700k
|
Controller |
Samsung Elpis Controller |
|
Chip Flash |
Samsung V-NAND 3-bit MLC |
|